? semiconductor components industries, llc, 2010 april, 2010 ? rev. 7 1 publication order number: mje18002/d MJE18002G switchmode npn bipolar power transistor for switching power supply applications the MJE18002G have an applications specific state ? of ? the ? art die designed for use in 220 v line operated switchmode power supplies and electronic light ballasts. features ? improved efficiency due to low base drive requirements: ? high and flat dc current gain h fe ? fast switching ? no coil required in base circuit for turn ? off (no current tail) ? tight parametric distributions are consistent lot ? to ? lot ? standard to ? 220 ? these devices are pb ? free and are rohs compliant* maximum ratings rating symbol value unit collector ? emitter sustaining voltage v ceo 450 vdc collector ? emitter breakdown voltage v ces 1000 vdc emitter ? base voltage v ebo 9.0 vdc collector current ? continuous ? peak (note 1) i c i cm 2.0 5.0 adc base current ? continuous ? peak (note 1) i b i bm 1.0 2.0 adc total device dissipation @ t c = 25 c derate above 25 c p d 50 0.4 w w/ c operating and storage temperature t j , t stg ? 65 to 150 c thermal characteristics characteristics symbol max unit thermal resistance, junction ? to ? case r jc 2.5 c/w thermal resistance, junction ? to ? ambient r ja 62.5 c/w maximum lead temperature for soldering purposes 1/8 from case for 5 seconds t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. pulse test: pulse width = 5 ms, duty cycle 10%. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. power transistor 2.0 amperes 100 volts ? 50 watts to ? 220ab case 221a ? 09 style 1 1 http://onsemi.com marking diagram 2 3 MJE18002G ay ww a = assembly location y = year ww = work week g = pb ? free package device package shipping ordering information MJE18002G to ? 220 (pb ? free) 50 units / rail
MJE18002G http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter sustaining voltage (i c = 100 ma, l = 25 mh) v ceo(sus) 450 ? ? vdc collector cutoff current (v ce = rated v ceo , i b = 0) i ceo ? ? 100 adc collector cutoff current (v ce = rated v ces , v eb = 0) t c = 125 c collector cutoff current (v ce = 800 v, v eb = 0) t c = 125 c i ces ? ? ? ? ? ? 100 500 100 adc emitter cutoff current (v eb = 9.0 vdc, i c = 0) i ebo ? ? 100 adc on characteristics base ? emitter saturation voltage (i c = 0.4 adc, i b = 40 madc) base ? emitter saturation voltage (i c = 1.0 adc, i b = 0.2 adc) v be(sat) ? ? 0.825 0.92 1.1 1.25 vdc collector ? emitter saturation voltage (i c = 0.4 adc, i b = 40 madc) @ t c = 125 c (i c = 1.0 adc, i b = 0.2 adc) @ t c = 125 c v ce(sat) ? ? ? ? 0.2 0.2 0.25 0.3 0.5 0.5 0.5 0.6 vdc dc current gain (i c = 0.2 adc, v ce = 5.0 vdc) @ t c = 125 c dc current gain (i c = 0.4 adc, v ce = 1.0 vdc) @ t c = 125 c dc current gain (i c = 1.0 adc, v ce = 1.0 vdc) @ t c = 125 c dc current gain (i c = 10 madc, v ce = 5.0 vdc) h fe 14 ? 11 11 6.0 5.0 10 ? 27 17 20 8.0 8.0 20 34 ? ? ? ? ? ? ? dynamic characteristics current gain bandwidth (i c = 0.2 adc, v ce = 10 vdc, f = 1.0 mhz) f t ? 13 ? mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c ob ? 35 60 pf input capacitance (v eb = 8.0 v) c ib ? 400 600 pf dynamic saturation: determined 1.0 s and 3.0 s after rising i b1 reach 0.9 final i b1 (see figure 18) i c = 0.4 a i b1 = 40 ma v cc = 300 v 1.0 s @ t c = 125 c v ce(dsat) ? ? 3.5 8.0 ? ? vdc 3.0 s @ t c = 125 c ? ? 1.5 3.8 ? ? i c = 1.0 a i b1 = 0.2 a v cc = 300 v 1.0 s @ t c = 125 c ? ? 8.0 14 ? ? 3.0 s @ t c = 125 c ? ? 2.0 7.0 ? ? 2. proper strike and creepage distance must be provided.
MJE18002G http://onsemi.com 3 electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit switching characteristics: resistive load (d.c. 10%, pulse width = 20 s) turn ? on time i c = 0.4 adc i b1 = 40 madc i b2 = 0.2 adc v cc = 300 v @ t c = 125 c t on ? ? 200 130 300 ? ns turn ? off time @ t c = 125 c t off ? ? 1.2 1.5 2.5 ? s turn ? on time i c = 1.0 adc i b1 = 0.2 adc i b2 = 0.5 adc v cc = 300 v @ t c = 125 c t on ? ? 85 95 150 ? ns turn ? off time @ t c = 125 c t off ? ? 1.7 2.1 2.5 ? s switching characteristics: inductive load (v clamp = 300 v, v cc = 15 v, l = 200 h) fall time i c = 0.4 adc, i b1 = 40 madc, i b2 = 0.2 adc @ t c = 125 c t fi ? ? 125 120 200 ? ns storage time @ t c = 125 c t si ? ? 0.7 0.8 1.25 ? s crossover time @ t c = 125 c t c ? ? 110 110 200 ? ns fall time i c = 1.0 adc, i b1 = 0.2 adc, i b2 = 0.5 adc @ t c = 125 c t fi ? ? 110 120 175 ? ns storage time @ t c = 125 c t si ? ? 1.7 2.25 2.75 ? s crossover time @ t c = 125 c t c ? ? 200 250 300 ? ns fall time i c = 0.4 adc, i b1 = 50 madc, i b2 = 50 madc @ t c = 125 c t fi ? ? 140 185 200 ? ns storage time @ t c = 125 c t si ? ? 2.2 2.5 3.0 ? s crossover time @ t c = 125 c t c ? ? 140 220 250 ? ns
MJE18002G http://onsemi.com 4 c, capacitance (pf) 0 1 2 0.001 0.010 0.100 1.000 h fe , dc current gain 1 10 100 0.01 0.10 1.00 10.00 figure 1. dc current gain @ 1 volt 1 10 100 0.01 0.10 1.00 10.00 0.01 0.10 1.00 10.00 0.01 0.10 1.00 10.00 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.01 0.10 1.00 10.00 1 10 100 1000 1 10 100 1000 typical static characteristics t j = 25 c t j = 125 c i c /i b = 10 i c /i b = 5 h fe , dc current gain v ce , voltage (volts) v ce , voltage (volts) v be , voltage (volts) 0.01 0.10 1.00 10.00 i c , collector current (amps) v ce = 1 v t j = 125 c t j = 25 c i c , collector current (amps) figure 2. dc current gain @ 5 volts v ce = 5 v t j = 125 c t j = 25 c t j = -20 c 0.01 0.10 1.00 10.0 0 0.001 0.010 0.100 1.000 i b , base current (ma) figure 3. collector saturation region t j = 25 c i c = 0.2 a 0.4 a 1 a 1.5 a 2 a i c , collector current (amps) figure 4. collector ? emitter saturation voltage i c /i b = 10 i c /i b = 5 0.01 0.10 1.00 10.00 0.01 0.10 1.00 10.00 i c , collector current (amps) figure 5. base ? emitter saturation region t j = 25 c t j = 125 c 1 10 100 1000 v ce , collector-emitter (volts) figure 6. capacitance c ib c ob t j = 25 c f = 1 mhz
MJE18002G http://onsemi.com 5 h fe , forced gain t si , storage time (ns) i c , collector current (amps) 0 500 1000 1500 2000 2500 5 7 9 11 13 15 0 500 1000 1500 2000 2500 3000 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 500 1000 1500 2000 2500 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 50 100 150 200 250 300 350 400 450 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 100 200 300 400 500 600 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 typical switching characteristics (i b2 = i c /2 for all switching) t, time (ns) t, time (ns) t, time (ns) t, time (ns) t, time (ns) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i c , collector current (amps) figure 7. resistive switching, t on i c /i b = 5 i c /i b = 10 t j = 125 c t j = 25 c i b(off) = i c /2 v cc = 300 v pw = 20 s 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i c , collector current (amps) figure 8. resistive switching, t off i b(off) = i c /2 v cc = 300 v pw = 20 s t j = 25 c t j = 125 c i c /i b = 10 i c /i b = 5 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 figure 9. inductive storage time, t si i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 h t j = 25 c t j = 125 c i c /i b = 5 i c /i b = 10 5 7 9 11 13 15 figure 10. inductive storage time t j = 25 c t j = 125 c i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 h i c = 1 a i c = 0.4 a i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 h t j = 25 c t j = 125 c t c t fi t c t fi 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i c , collector current (amps) figure 11. inductive switching, t c and t fi , i c /i b = 5 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i c , collector current (amps) figure 12. inductive switching, t c and t fi , i c /i b = 10 i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 h t j = 25 c t j = 125 c t c t fi t c t fi
MJE18002G http://onsemi.com 6 0.01 0.10 1.00 10.00 10 100 1000 60 80 100 120 140 160 180 56789101112131415 0.0 0.2 0.4 0.6 0.8 1.0 20 40 60 80 100 120 140 160 power derating factor 0.0 0.5 1.0 1.5 2.0 2.5 0 200 400 600 800 1000 1200 50 70 90 110 130 150 170 190 210 230 250 56789101112131415 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 15 is based on t c = 25 c; t j (pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c > 25 c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figure 15 may be found at any case temperature by using the appropriate curve on figure 17. t j (pk) may be calculated from the data in figures 20. at any case temperatures, thermal limitations will reduce the power that can be handled to values less the limitations imposed by second breakdown. for inductive loads, high voltage and current must be sustained simultaneously during turn ? off with the base to emitter junction reverse biased. the safe level is specified as a reverse biased safe operating area (figure 16). this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. t fi , fall time (ns) t c , cross\over time (ns) i c , collector current (amps) i c , collector current (amps) v ce , collector-emitter voltage (volts) typical switching characteristics (i b2 = i c /2 for all switching) 5 6 7 8 9 10 11 12 13 14 15 h fe , forced gain figure 13. inductive fall time t j = 25 c t j = 125 c i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 h i c = 1 a 5 6 7 8 9 10 11 12 13 14 15 h fe , forced gain figure 14. inductive crossover time guaranteed safe operating area information i c = 1 a i c = 0.4 a i c = 0.4 a t j = 25 c t j = 125 c i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 h 10 100 1000 v ce , collector-emitter voltage (volts) figure 15. forward bias safe operating area 1 s 10 s 50 s 1ms 5ms dc (mje18002) 0 200 400 600 800 1000 1200 figure 16. reverse bias switching safe operating area t c 125 c i c /i b 4 l c = 500 h v be(off) = 0.5 v 0 v -1.5 v 20 40 60 80 100 120 160 140 t c , case temperature ( c) figure 17. forward bias power derating second breakdown derating thermal derating
MJE18002G http://onsemi.com 7 -5 -4 -3 -2 -1 0 1 2 3 4 5 012345678 time v ce volts i b 1 s 3 s 90% i b dyn 1 s dyn 3 s 10 9 8 7 6 5 4 3 2 1 0 012 34567 8 time i b i c t si v clamp 10% v clamp 90% i b 1 10% i c t c 90% i c t fi figure 18. dynamic saturation voltage measurements figure 19. inductive switching measurements table 1. inductive load switching drive circuit +15 v 1 f 150 3 v 100 3 v mpf930 +10 v 50 common -v off 500 f mpf930 mtp8p10 mur105 mje210 mtp12n10 mtp8p10 150 3 v 100 f i out a rb1 rb2 1 f i c peak v ce peak v ce i b i b 1 i b 2 v(br)ceo(sus) l = 10 h rb2 = v cc = 20 volts i c (pk) = 100 ma inductive switching l = 200 h rb2 = 0 v cc = 15 volts rb1 selected for desired i b 1 rbsoa l = 500 h rb2 = 0 v cc = 15 volts rb1 selected for desired i b 1 0.01 0.10 1.00 0.01 0.10 1.00 10.00 100.00 1000. 0 t, time (ms) r(t) transient thermal resistance (normalized) 0.1 single pulse 0.02 0.05 0.2 0.5 r jc (t) = r(t) r jc r jc = c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r jc (t) duty cycle, d = t 1 /t 2 t 1 t 2 p (pk) typical thermal response figure 20. typical thermal response (z jc (t)) for mje18002
MJE18002G http://onsemi.com 8 package dimensions to ? 220ab case 221a ? 09 issue af style 1: pin 1. base 2. collector 3. emitter 4. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mje18002/d switchmode is a trademark of semiconductor components industries, llc. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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